11 results
Contributors
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- By Mitchell Aboulafia, Frederick Adams, Marilyn McCord Adams, Robert M. Adams, Laird Addis, James W. Allard, David Allison, William P. Alston, Karl Ameriks, C. Anthony Anderson, David Leech Anderson, Lanier Anderson, Roger Ariew, David Armstrong, Denis G. Arnold, E. J. Ashworth, Margaret Atherton, Robin Attfield, Bruce Aune, Edward Wilson Averill, Jody Azzouni, Kent Bach, Andrew Bailey, Lynne Rudder Baker, Thomas R. Baldwin, Jon Barwise, George Bealer, William Bechtel, Lawrence C. Becker, Mark A. Bedau, Ernst Behler, José A. Benardete, Ermanno Bencivenga, Jan Berg, Michael Bergmann, Robert L. Bernasconi, Sven Bernecker, Bernard Berofsky, Rod Bertolet, Charles J. Beyer, Christian Beyer, Joseph Bien, Joseph Bien, Peg Birmingham, Ivan Boh, James Bohman, Daniel Bonevac, Laurence BonJour, William J. Bouwsma, Raymond D. Bradley, Myles Brand, Richard B. Brandt, Michael E. Bratman, Stephen E. Braude, Daniel Breazeale, Angela Breitenbach, Jason Bridges, David O. Brink, Gordon G. Brittan, Justin Broackes, Dan W. Brock, Aaron Bronfman, Jeffrey E. Brower, Bartosz Brozek, Anthony Brueckner, Jeffrey Bub, Lara Buchak, Otavio Bueno, Ann E. Bumpus, Robert W. Burch, John Burgess, Arthur W. Burks, Panayot Butchvarov, Robert E. Butts, Marina Bykova, Patrick Byrne, David Carr, Noël Carroll, Edward S. Casey, Victor Caston, Victor Caston, Albert Casullo, Robert L. Causey, Alan K. L. Chan, Ruth Chang, Deen K. Chatterjee, Andrew Chignell, Roderick M. Chisholm, Kelly J. Clark, E. J. Coffman, Robin Collins, Brian P. Copenhaver, John Corcoran, John Cottingham, Roger Crisp, Frederick J. Crosson, Antonio S. Cua, Phillip D. Cummins, Martin Curd, Adam Cureton, Andrew Cutrofello, Stephen Darwall, Paul Sheldon Davies, Wayne A. Davis, Timothy Joseph Day, Claudio de Almeida, Mario De Caro, Mario De Caro, John Deigh, C. F. Delaney, Daniel C. Dennett, Michael R. DePaul, Michael Detlefsen, Daniel Trent Devereux, Philip E. Devine, John M. Dillon, Martin C. Dillon, Robert DiSalle, Mary Domski, Alan Donagan, Paul Draper, Fred Dretske, Mircea Dumitru, Wilhelm Dupré, Gerald Dworkin, John Earman, Ellery Eells, Catherine Z. Elgin, Berent Enç, Ronald P. Endicott, Edward Erwin, John Etchemendy, C. Stephen Evans, Susan L. Feagin, Solomon Feferman, Richard Feldman, Arthur Fine, Maurice A. Finocchiaro, William FitzPatrick, Richard E. Flathman, Gvozden Flego, Richard Foley, Graeme Forbes, Rainer Forst, Malcolm R. Forster, Daniel Fouke, Patrick Francken, Samuel Freeman, Elizabeth Fricker, Miranda Fricker, Michael Friedman, Michael Fuerstein, Richard A. Fumerton, Alan Gabbey, Pieranna Garavaso, Daniel Garber, Jorge L. A. Garcia, Robert K. Garcia, Don Garrett, Philip Gasper, Gerald Gaus, Berys Gaut, Bernard Gert, Roger F. Gibson, Cody Gilmore, Carl Ginet, Alan H. Goldman, Alvin I. Goldman, Alfonso Gömez-Lobo, Lenn E. Goodman, Robert M. Gordon, Stefan Gosepath, Jorge J. E. Gracia, Daniel W. Graham, George A. Graham, Peter J. Graham, Richard E. Grandy, I. Grattan-Guinness, John Greco, Philip T. Grier, Nicholas Griffin, Nicholas Griffin, David A. Griffiths, Paul J. Griffiths, Stephen R. Grimm, Charles L. Griswold, Charles B. Guignon, Pete A. Y. Gunter, Dimitri Gutas, Gary Gutting, Paul Guyer, Kwame Gyekye, Oscar A. Haac, Raul Hakli, Raul Hakli, Michael Hallett, Edward C. Halper, Jean Hampton, R. James Hankinson, K. R. Hanley, Russell Hardin, Robert M. Harnish, William Harper, David Harrah, Kevin Hart, Ali Hasan, William Hasker, John Haugeland, Roger Hausheer, William Heald, Peter Heath, Richard Heck, John F. Heil, Vincent F. Hendricks, Stephen Hetherington, Francis Heylighen, Kathleen Marie Higgins, Risto Hilpinen, Harold T. Hodes, Joshua Hoffman, Alan Holland, Robert L. Holmes, Richard Holton, Brad W. Hooker, Terence E. Horgan, Tamara Horowitz, Paul Horwich, Vittorio Hösle, Paul Hoβfeld, Daniel Howard-Snyder, Frances Howard-Snyder, Anne Hudson, Deal W. Hudson, Carl A. Huffman, David L. Hull, Patricia Huntington, Thomas Hurka, Paul Hurley, Rosalind Hursthouse, Guillermo Hurtado, Ronald E. Hustwit, Sarah Hutton, Jonathan Jenkins Ichikawa, Harry A. Ide, David Ingram, Philip J. Ivanhoe, Alfred L. Ivry, Frank Jackson, Dale Jacquette, Joseph Jedwab, Richard Jeffrey, David Alan Johnson, Edward Johnson, Mark D. Jordan, Richard Joyce, Hwa Yol Jung, Robert Hillary Kane, Tomis Kapitan, Jacquelyn Ann K. Kegley, James A. Keller, Ralph Kennedy, Sergei Khoruzhii, Jaegwon Kim, Yersu Kim, Nathan L. King, Patricia Kitcher, Peter D. Klein, E. D. Klemke, Virginia Klenk, George L. Kline, Christian Klotz, Simo Knuuttila, Joseph J. Kockelmans, Konstantin Kolenda, Sebastian Tomasz Kołodziejczyk, Isaac Kramnick, Richard Kraut, Fred Kroon, Manfred Kuehn, Steven T. Kuhn, Henry E. Kyburg, John Lachs, Jennifer Lackey, Stephen E. Lahey, Andrea Lavazza, Thomas H. Leahey, Joo Heung Lee, Keith Lehrer, Dorothy Leland, Noah M. Lemos, Ernest LePore, Sarah-Jane Leslie, Isaac Levi, Andrew Levine, Alan E. Lewis, Daniel E. Little, Shu-hsien Liu, Shu-hsien Liu, Alan K. L. Chan, Brian Loar, Lawrence B. Lombard, John Longeway, Dominic McIver Lopes, Michael J. Loux, E. J. Lowe, Steven Luper, Eugene C. Luschei, William G. Lycan, David Lyons, David Macarthur, Danielle Macbeth, Scott MacDonald, Jacob L. Mackey, Louis H. Mackey, Penelope Mackie, Edward H. Madden, Penelope Maddy, G. B. Madison, Bernd Magnus, Pekka Mäkelä, Rudolf A. Makkreel, David Manley, William E. Mann (W.E.M.), Vladimir Marchenkov, Peter Markie, Jean-Pierre Marquis, Ausonio Marras, Mike W. Martin, A. P. Martinich, William L. McBride, David McCabe, Storrs McCall, Hugh J. McCann, Robert N. McCauley, John J. McDermott, Sarah McGrath, Ralph McInerny, Daniel J. McKaughan, Thomas McKay, Michael McKinsey, Brian P. McLaughlin, Ernan McMullin, Anthonie Meijers, Jack W. Meiland, William Jason Melanson, Alfred R. Mele, Joseph R. Mendola, Christopher Menzel, Michael J. Meyer, Christian B. Miller, David W. Miller, Peter Millican, Robert N. Minor, Phillip Mitsis, James A. Montmarquet, Michael S. Moore, Tim Moore, Benjamin Morison, Donald R. Morrison, Stephen J. Morse, Paul K. Moser, Alexander P. D. Mourelatos, Ian Mueller, James Bernard Murphy, Mark C. Murphy, Steven Nadler, Jan Narveson, Alan Nelson, Jerome Neu, Samuel Newlands, Kai Nielsen, Ilkka Niiniluoto, Carlos G. Noreña, Calvin G. Normore, David Fate Norton, Nikolaj Nottelmann, Donald Nute, David S. Oderberg, Steve Odin, Michael O’Rourke, Willard G. Oxtoby, Heinz Paetzold, George S. Pappas, Anthony J. Parel, Lydia Patton, R. P. Peerenboom, Francis Jeffry Pelletier, Adriaan T. Peperzak, Derk Pereboom, Jaroslav Peregrin, Glen Pettigrove, Philip Pettit, Edmund L. Pincoffs, Andrew Pinsent, Robert B. Pippin, Alvin Plantinga, Louis P. Pojman, Richard H. Popkin, John F. Post, Carl J. Posy, William J. Prior, Richard Purtill, Michael Quante, Philip L. Quinn, Philip L. Quinn, Elizabeth S. Radcliffe, Diana Raffman, Gerard Raulet, Stephen L. Read, Andrews Reath, Andrew Reisner, Nicholas Rescher, Henry S. Richardson, Robert C. Richardson, Thomas Ricketts, Wayne D. Riggs, Mark Roberts, Robert C. Roberts, Luke Robinson, Alexander Rosenberg, Gary Rosenkranz, Bernice Glatzer Rosenthal, Adina L. Roskies, William L. Rowe, T. M. Rudavsky, Michael Ruse, Bruce Russell, Lilly-Marlene Russow, Dan Ryder, R. M. Sainsbury, Joseph Salerno, Nathan Salmon, Wesley C. Salmon, Constantine Sandis, David H. Sanford, Marco Santambrogio, David Sapire, Ruth A. Saunders, Geoffrey Sayre-McCord, Charles Sayward, James P. Scanlan, Richard Schacht, Tamar Schapiro, Frederick F. Schmitt, Jerome B. Schneewind, Calvin O. Schrag, Alan D. Schrift, George F. Schumm, Jean-Loup Seban, David N. Sedley, Kenneth Seeskin, Krister Segerberg, Charlene Haddock Seigfried, Dennis M. Senchuk, James F. Sennett, William Lad Sessions, Stewart Shapiro, Tommie Shelby, Donald W. Sherburne, Christopher Shields, Roger A. Shiner, Sydney Shoemaker, Robert K. Shope, Kwong-loi Shun, Wilfried Sieg, A. John Simmons, Robert L. Simon, Marcus G. Singer, Georgette Sinkler, Walter Sinnott-Armstrong, Matti T. Sintonen, Lawrence Sklar, Brian Skyrms, Robert C. Sleigh, Michael Anthony Slote, Hans Sluga, Barry Smith, Michael Smith, Robin Smith, Robert Sokolowski, Robert C. Solomon, Marta Soniewicka, Philip Soper, Ernest Sosa, Nicholas Southwood, Paul Vincent Spade, T. L. S. Sprigge, Eric O. Springsted, George J. Stack, Rebecca Stangl, Jason Stanley, Florian Steinberger, Sören Stenlund, Christopher Stephens, James P. Sterba, Josef Stern, Matthias Steup, M. A. Stewart, Leopold Stubenberg, Edith Dudley Sulla, Frederick Suppe, Jere Paul Surber, David George Sussman, Sigrún Svavarsdóttir, Zeno G. Swijtink, Richard Swinburne, Charles C. Taliaferro, Robert B. Talisse, John Tasioulas, Paul Teller, Larry S. Temkin, Mark Textor, H. S. Thayer, Peter Thielke, Alan Thomas, Amie L. Thomasson, Katherine Thomson-Jones, Joshua C. Thurow, Vzalerie Tiberius, Terrence N. Tice, Paul Tidman, Mark C. Timmons, William Tolhurst, James E. Tomberlin, Rosemarie Tong, Lawrence Torcello, Kelly Trogdon, J. D. Trout, Robert E. Tully, Raimo Tuomela, John Turri, Martin M. Tweedale, Thomas Uebel, Jennifer Uleman, James Van Cleve, Harry van der Linden, Peter van Inwagen, Bryan W. Van Norden, René van Woudenberg, Donald Phillip Verene, Samantha Vice, Thomas Vinci, Donald Wayne Viney, Barbara Von Eckardt, Peter B. M. Vranas, Steven J. Wagner, William J. Wainwright, Paul E. Walker, Robert E. Wall, Craig Walton, Douglas Walton, Eric Watkins, Richard A. Watson, Michael V. Wedin, Rudolph H. Weingartner, Paul Weirich, Paul J. Weithman, Carl Wellman, Howard Wettstein, Samuel C. Wheeler, Stephen A. White, Jennifer Whiting, Edward R. Wierenga, Michael Williams, Fred Wilson, W. Kent Wilson, Kenneth P. Winkler, John F. Wippel, Jan Woleński, Allan B. Wolter, Nicholas P. Wolterstorff, Rega Wood, W. Jay Wood, Paul Woodruff, Alison Wylie, Gideon Yaffe, Takashi Yagisawa, Yutaka Yamamoto, Keith E. Yandell, Xiaomei Yang, Dean Zimmerman, Günter Zoller, Catherine Zuckert, Michael Zuckert, Jack A. Zupko (J.A.Z.)
- Edited by Robert Audi, University of Notre Dame, Indiana
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- Book:
- The Cambridge Dictionary of Philosophy
- Published online:
- 05 August 2015
- Print publication:
- 27 April 2015, pp ix-xxx
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Optical and Spectroscopic Ellipsometric Study of Indium Boron Nitride Sputtered Thin Films with Low Boron Concentration
- Mohammad A. Ebdah, Martin E. Kordesch, David C. Ingram, Hamad AlBrithen, Abdel-Rahman A. Ibdah, Kevin Cooper
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1307 / 2011
- Published online by Cambridge University Press:
- 04 April 2011, mrsf10-1307-cc08-02
- Print publication:
- 2011
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Amorphous indium boron nitride (a-InBN) thin films were successfully fabricated using radio frequency (RF) magnetron sputtering, and were deposited onto fused silica and c-Si(100) substrates. Sputtering was achieved using a target of polycrystalline B and In species with B/In nominal at.% ratio of 25/75 under the flow of nitrogen. The structure and composition of the films have been investigated by X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS), respectively. The XRD patterns reveal that the sputtered films are amorphous, and the XPS confirms the presence of boron in the films in addition to an oxide overlayer. The optical absorption of samples grown on silica was obtained using spectrophotometry (SP) technique in the wavelength range (200 - 800) nm. Analysis of the absorption coefficients using the Tauc linear extrapolation gives an optical bandgap of 2.05 eV, indicating a higher bandgap comparing to the measured optical bandgap of a-InN (1.25 eV) due to doping with boron. Films grown on c-Si(100) were characterized by spectroscopic ellipsometry (SE) technique in the wavelength range of (300-1700) nm. The measured ellipsometric spectra are described well by a two-layer model structure, which consists of a transparent layer on top of an absorbing layer. The thicknesses and optical functions of the transparent and absorbing layers were obtained by analyzing the measured ellipsometric spectra, Ψ and Δ within the framework of the Cauchy–Urbach (CU) and Tauc–Lorentz (TL) models, respectively. While the overlayer is completely transparent over the measured range (k(λ) = 0), the absorbing layer underneath it exhibits a clear absorption above its optical bandgap of 2.15 eV, which is in a good agreement with the SP finding. There was an excellent agreement between the bandgap obtained as a fitting parameter from the optical model and that obtained by linear extrapolation using the empirical Tauc and Cody models for amorphous semiconductors.
171 - Hierarchy of Circulating and Vessel Wall–Derived Endothelial Progenitor Cells
- from PART III - VASCULAR BED/ORGAN STRUCTURE AND FUNCTION IN HEALTH AND DISEASE
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- By David A. Ingram, Herman B. Wells Center for Pediatric Research, Indiana University School of Medicine, Indianapolis, Mervin C. Yoder, Herman B. Wells Center for Pediatric Research, Indiana University School of Medicine, Indianapolis
- Edited by William C. Aird, Harvard University, Massachusetts
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- Book:
- Endothelial Biomedicine
- Published online:
- 04 May 2010
- Print publication:
- 03 September 2007, pp 1589-1596
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Summary
The level of endothelial cell (EC) proliferation in normal, mature vessels in most mammals remains poorly defined but in general is reported to be extremely low, if not nonexistent. In fact, until approximately 50 years ago, the predominant view held that ECs lining vessels do not undergo mitosis. However, the advent of tritiated thymidine labeling studies and modifications of the Hautchen preparation permitted direct analysis of EC mitosis in vessels recovered after labeling in vivo (1). In some experimental animals, such as rats, guinea pigs, pigs, and dogs, the tritiated thymidine labeling studies demonstrated 0.1% to 3.0% EC turnover daily (2, 3). Endothelial proliferation rates were correlated with the age of the subject and appeared to decline rapidly after birth with most adult vessel endothelium displaying mitosis in <1% of the cells daily (4). Furthermore, the sites of endothelial replication were not homogenously distributed but appeared to occur in clustered areas nearest vessel bifurcations where flow was disturbed and often turbulent (2). Whether these dividing ECs were unique and possessed proliferative potential that was lacking in other mature endothelium or these focal areas of replicating cells merely represented the sites of greatest vessel injury and endothelial turnover has not yet been determined. It has been well documented that EC division may reach 50% of the cells in the thoracic aorta following experimentally induced hypertension, re-endothelialization of organized clots or injured vessels after arterial denudation, or following experimentally induced vascular constriction (5).
In marked contrast to the slow turnover of ECs in normal vessels, in vitro plating of ECs derived from human or animal vessels is associated with brisk EC proliferation.
Trapping of Hydrogen in Carbon Nitride Films During or After High Temperature Heat Treatment
- David C. Ingram, Asghar Kayani, William C. Lanter, Charles A. DeJoseph
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- Journal:
- MRS Online Proceedings Library Archive / Volume 854 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, U8.4
- Print publication:
- 2004
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Thin films of carbon nitride deposited by ion beam assisted deposition or by magnetron sputter deposition typically contain a significant fraction of hydrogen, 1–30 atomic percent (at.%). In order to improve the thermal stability of the properties of the films, attempts have been made to minimize the hydrogen trapped during deposition. Such films typically have less than 5 at.% hydrogen. On heating these films in ultra high purity (99.999%) argon, it has been found that above 600°C they start to absorb significant amounts of hydrogen, this despite retaining their mechanical integrity. The composition of the films is determined using Rutherford Backscattering Spectroscopy in combination with Elastic Recoil Spectroscopy for detecting the hydrogen isotopes. In this paper, the possible sources of the hydrogen have been investigated by exposing the samples to deuterated water or deuterium gas during or immediately after the heat treatment.
Trapping of argon in ion beam deposited thin films of CNx Hy
- Asghar N. Kayani, David C. Ingram
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- Journal:
- MRS Online Proceedings Library Archive / Volume 792 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, R9.22
- Print publication:
- 2003
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Unbalanced magnetron sputtering deposition of CNx Hy films has been performed with various levels of negative substrate bias and with different flow rates of nitrogen and hydrogen. Argon was used as a sputtering gas and formed the majority of the gas in the plasma. The elemental concentrations of the films were measured in samples deposited on glassy carbon with a 2.2 MeV of He beam used to perform simultaneous RBS and ERS. Argon was found to be trapped in the non-hydrogenated films to a level of up to ∼ 4.6 %. The concentration of argon increased for the films deposited under higher negative bias. With the introduction of hydrogen, argon trapping was first minimized and later completely eliminated, even at higher bias conditions, suggesting that the softness of the films brought on by hydrogenation also caused the films to be unable to trap argon during growth and thus showing that argon stability is dependent on burial below a surface of particular structural properties.
Thermal Stability of Thin Films of Ion Beam Deposited CNx
- David C. Ingram, Asghar Kayani, William C. Lanter, Charles A. DeJoseph
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- Journal:
- MRS Online Proceedings Library Archive / Volume 792 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, R9.21
- Print publication:
- 2003
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A dual ion beam deposition system was used to deposit thin films of CNx from a carbon target. A 1 keV nitrogen ion beam from a 3 cm Kaufman source was used to sputter carbon from a graphite target, and a second nitrogen ion beam of 50 eV, from an RF ion source, was used to bombard the growing film with nitrogen ions. Using this technique, rather than direct ion beam deposition from methane, it is possible to reduce the amount of hydrogen in these films to less than 5% (atomic), and to boost the nitrogen content to over 30%. These films were then subjected to isochronal heating up to 900°C to determine the stability of the films as compared to those with much higher concentrations of hydrogen.
CNx is a material that is difficult to fabricate without the inclusion of large amounts of hydrogen. A high hydrogen content has the tendency to make the material sensitive to property changes as it is heated over 200°C. Concomitant with a loss of hydrogen is the loss of nitrogen.
In the films that had lower amounts of hydrogen it was found that the loss of nitrogen during heating was delayed until higher temperatures were reached. However, instead of hydrogen being evolved during heating, the amount of hydrogen in the film increases, reaching a maximum concentration of ∼45% at 800°C.
Ion Beam Study of Early Stages of Growth of GaN films on Sapphire
- Eugen M. Trifan, David C. Ingram
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- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L3.5
- Print publication:
- 2002
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An innovative approach for in-situ characterization has been used in this work to investigate the composition, growth mode, morphology and crystalline ordering of the early stages of growth of GaN films grown on sapphire by MOCVD for substrate temperatures in the range of 450°C to 1050°C. We have performed in-situ characterization by Rutherford Backscattering Spectroscopy (RBS), Ion Channeling, X-ray Photoelectron Spectroscopy (XPS), and Low Energy Electron Diffraction. Ex-situ the films have been characterized by Scanning Electron Microscopy (SEM), X-ray Diffraction (XRD) and thickness profilometry. The films have been grown in an in-house designed and build MOCVD reactor that is attached by UHV lines to the analysis facilities. RBS analysis indicated that the films have the correct stoichiometry, have variable thickness and for low substrate temperature completely cover the substrate while for temperatures 850°C and higher islands are formed that may cover as few as 5 percent of the substrate. From Ion Channeling and LEED we have determined the crystallographic phase to be wurtzite. The crystalline quality increases with higher deposition temperature and with thickness. The films are epitaxialy grown with the <0001> crystallographic axis and planes of the GaN films aligned with the sapphire within 0.2 degrees.
Anesthesia-Associated Carbon Monoxide Exposures Among Surgical Patients
- Michele L. Pearson, William C. Levine, Robert J. Finton, Charles T. Ingram, Kathleen B. Gay, Gerda Tapelband, J. David Smith, William R. Jarvis
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- Journal:
- Infection Control & Hospital Epidemiology / Volume 22 / Issue 6 / June 2001
- Published online by Cambridge University Press:
- 02 January 2015, pp. 352-356
- Print publication:
- June 2001
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Objective:
To estimate the extent of, and evaluate risk factors for, elevated carboxyhemoglobin levels among patients undergoing general anesthesia and to identify the source of carbon monoxide.
Design:Matched case-control study to measure carboxyhemoglobin levels.
Setting:Large academic medical center.
Participants:45 surgical patients who underwent general anesthesia.
Results:Case-patients were more likely than controls to undergo surgery on Monday or Tuesday (10/15 vs 7/30; matched odds ratio [mOR], 7.7; 95% confidence interval [CI95], 1.8-34; P=.01), in one particular room (7/15 vs 4/30; mOR, 8.5; CI95, 1.5-48; P=.03) or in a room that was idle for ≥24 hours (11/15 vs 1/30; mOR, 95.5; CI95, 8.0-1,138; P≤.001). In a multivariate model, only rooms, and hence the anesthesia equipment, that were idle for ≥24 hours were independently associated with elevated intraoperative carboxyhemoglobin levels (OR, 22.4; CI95, 1.5-338; P=.025). Moreover, peak carboxyhemoglobin levels were correlated with the length of time that the room was idle (r=0.7; CI95, 0.3-0.9). Carbon monoxide was detected in the anesthesia machine outflow during one case-procedure. No contamination of anesthesia gas supplies or CO2 absorbents was found.
Conclusions:Carbon monoxide may accumulate in anesthesia circuits left idle for ≥24 hours as a result of a chemical interaction between CO2-absorbent granules and anesthetic gases. Patients administered anesthesia through such circuits may be at increased risk for elevated carboxyhemoglobin levels during surgery or the early postoperative period.
Growth of Carbon-Nitrogen Films with a Broad Beam RF Ion Source
- David C. Ingram, William C. Lanter, Charles A. DeJoseph, Asghar Kayani
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- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I3.2.1
- Print publication:
- 2001
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With the lack of suitable native oxides, gallium nitride based semiconductor devices will need other materials for dielectric, insulating and passivating layers in a variety of device applications. A carbon-nitrogen film is a possible candidate for this application. Insulating films can be made of this material with a variety of techniques. Ion beam techniques are a well accepted way to demonstrate the existence of a material with certain properties and a way to establish the range of those properties in the material. Ion beam assisted deposition has been used in this work to fabricate materials with various stoichiometries in order to determine the range of properties available for this material.
Thin films containing predominantly carbon and nitrogen have been grown using a mixture of methane and nitrogen from a 20 cm rf ion source. The stoichiometry of the films has been measured with Rutherford Backscattering Spectroscopy (RBS), and Elastic Recoil Spectroscopy (ERS). The effect of nitrogen-to-methane ratio, ion energy, and RF power on the film composition, properties, and growth rate is reported together with an analysis of the anticipated growth mechanics.
Atomic Profiles of High Energy (MeV) Si Implanted into GaAs
- Phillip E. Thompson, Robert G. Wilson, David C. Ingram, Peter P. Pronko
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- Journal:
- MRS Online Proceedings Library Archive / Volume 93 / 1987
- Published online by Cambridge University Press:
- 25 February 2011, 73
- Print publication:
- 1987
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High energy Si implantation into GaAs is of interest for the fabrication of fully implanted monolithic microwave integrated circuits. 30Si has been implanted into LEC GaAs at energies of 1, 2, 4, and 6 MeV. We have measured atomic concentration profiles using SIMS and carrier concentration profiles using an electrolytic CV procedure. Theoretical atomic profiles have been calculated using TRIM-86. Excellent SIMS dynamic range and low background (<1014/cm3) was achieved for the profiles by the use of 30Si. The range statistics and profile shape factors: Rm, Rp, ΔRp, skewness (Y1), kurtosis (B2), and maximum Si density (Nmax) have been determined from the SIMS data by applying a Pearson IV computer fitting routine. The first two moments (Rp and ΔRp) were also obtained from the carrier profiles and the theoretical profiles. The range and standard deviation obtained from each profile have a maximum difference of only 15%, and the difference is usually less than 10%. This is less than the mutual experimental uncertainty of 17%. The samples were activated using a furnace anneal (800°C, 15 min) with a Si3N4 cap and using rapid thermal anneal (1000°C, 10s) with and without a Si3N4 cap. No redistribution of Si was observed for any of the anneal conditions within experimental error.
Depth Profiling of Hydrogen in Ion-Implanted Polymers
- J. David Carlson, Peter P. Pronko, David C. Ingram
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- Journal:
- MRS Online Proceedings Library Archive / Volume 27 / 1983
- Published online by Cambridge University Press:
- 25 February 2011, 455
- Print publication:
- 1983
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Depth profiling of hydrogen in polymeric materials poses special problems. Backscattering methods are ruled out because of kinematics. Nuclear reaction methods are undesirable because small reaction cross sections necessitate large fluences of high mass projectiles and result in unacceptable levels of radiation damage. We have used a helium-induced proton-recoil technique with 3 MeV 4He particles to measure the hydrogen distribution in pristine and ion-implanted polyvinylidene fluoride (PVDF) films. The incident 4He particles stopped in the 25 micron PVDF films while the recoiling protons were detected after passing through the polymer film. Large changes in the hydrogen content of PVDF films implanted with modest fluences of 6 MeV carbon, oxygen and nickel ions were observed.